Unlocking LiNiO2’s Dynamic Spin Behavior for Next-Gen Battery Materials
The Three-State Spin Dance in LiNiO2 Groundbreaking research reveals that nickel ions in lithium nickel oxide (LiNiO2) exist in a…
Tag: Rotation
SOT-MRAM Breakthrough: From Lab to Mass Production With β-Tungsten Stability
After years of laboratory development, spin-orbit torque magnetic memory has overcome its fundamental materials stability barrier. A multinational research team has stabilized β-phase tungsten against manufacturing temperatures, creating 64-kilobit SOT-MRAM chips that combine SRAM-like speed with true non-volatility.
After decades confined to research laboratories, spin-orbit torque magnetic random-access memory (SOT-MRAM) appears poised for commercial deployment following a critical materials science breakthrough. An international research collaboration has solved the persistent stability problem of β-phase tungsten, the conductive material essential for generating the spin currents that enable SOT-MRAM’s ultrafast data rotation and switching capabilities.