Intel’s Panther Lake Xe3 GPU Puts Up A Big Score In Leaked 3DMark Test Result
TITLE: Intel’s Panther Lake Xe3 GPU Shows Stunning Performance Leap in Latest Benchmark Leak Intel’s upcoming Panther Lake processors are…
Tag: Random-access memory
SOT-MRAM Breakthrough: From Lab to Mass Production With β-Tungsten Stability
After years of laboratory development, spin-orbit torque magnetic memory has overcome its fundamental materials stability barrier. A multinational research team has stabilized β-phase tungsten against manufacturing temperatures, creating 64-kilobit SOT-MRAM chips that combine SRAM-like speed with true non-volatility.
After decades confined to research laboratories, spin-orbit torque magnetic random-access memory (SOT-MRAM) appears poised for commercial deployment following a critical materials science breakthrough. An international research collaboration has solved the persistent stability problem of β-phase tungsten, the conductive material essential for generating the spin currents that enable SOT-MRAM’s ultrafast data rotation and switching capabilities.