How 3D-Printed Concrete Architecture Could Reverse Construction’s Carbon Footprint
The Concrete Revolution: From Carbon Source to Carbon Sink At the University of Pennsylvania’s Polyhedral Structures Laboratory, architects and engineers…
The Concrete Revolution: From Carbon Source to Carbon Sink At the University of Pennsylvania’s Polyhedral Structures Laboratory, architects and engineers…
After years of laboratory development, spin-orbit torque magnetic memory has overcome its fundamental materials stability barrier. A multinational research team has stabilized β-phase tungsten against manufacturing temperatures, creating 64-kilobit SOT-MRAM chips that combine SRAM-like speed with true non-volatility.
After decades confined to research laboratories, spin-orbit torque magnetic random-access memory (SOT-MRAM) appears poised for commercial deployment following a critical materials science breakthrough. An international research collaboration has solved the persistent stability problem of β-phase tungsten, the conductive material essential for generating the spin currents that enable SOT-MRAM’s ultrafast data rotation and switching capabilities.